Room temperature bonding of SiO2 and SiO2 by surface activated bonding method using Si ultrathin films

Jun Utsumi, Kensuke Ide, Yuko Ichiyanagi

  • 2 Citations

Abstract

The bonding of metal electrodes and insulator hybrid interfaces is one of the key techniques in three-dimensional integration technology. Metal materials such as Cu or Al are easily directly bonded by surface activated bonding at room temperature, but insulator materials such as SiO2 or SiN are not. Using only Si ultrathin films, we propose a new bonding technique for SiO2/SiO2 bonding at room temperature. Two SiO2 surfaces, on which Si thin films were deposited, were contacted in vacuum. We confirmed that the thickness of the layer was about 7 nm by transmission electron microscopy observation and that the layer was non crystalline by electron energy loss spectroscopy analysis. No metal material was found in the bonding interface by energy-dispersive X-ray spectroscopy analysis. The surface energy was about 1 J/m2, and the bonding strength was more than 25MPa. This bonding technique was successfully realized to enable SiO2/SiO2 bonding without a metal adhesion layer.

Original languageEnglish
Article number026503
JournalJapanese Journal of Applied Physics
Volume55
Issue number2
DOIs
StatePublished - 2016 Feb 1

Fingerprint

Metals
Temperature
Ultrathin films
Electron energy loss spectroscopy
Interfacial energy
Adhesion
Vacuum
Crystalline materials
Transmission electron microscopy
Thin films
Electrodes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Room temperature bonding of SiO2 and SiO2 by surface activated bonding method using Si ultrathin films. / Utsumi, Jun; Ide, Kensuke; Ichiyanagi, Yuko.

In: Japanese Journal of Applied Physics, Vol. 55, No. 2, 026503, 01.02.2016.

Research output: Contribution to journalArticle

Utsumi, Jun; Ide, Kensuke; Ichiyanagi, Yuko / Room temperature bonding of SiO2 and SiO2 by surface activated bonding method using Si ultrathin films.

In: Japanese Journal of Applied Physics, Vol. 55, No. 2, 026503, 01.02.2016.

Research output: Contribution to journalArticle

@article{f07dd12871964c9fb65798a3566b8671,
title = "Room temperature bonding of SiO2 and SiO2 by surface activated bonding method using Si ultrathin films",
author = "Jun Utsumi and Kensuke Ide and Yuko Ichiyanagi",
year = "2016",
month = "2",
doi = "10.7567/JJAP.55.026503",
volume = "55",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "2",

}

TY - JOUR

T1 - Room temperature bonding of SiO2 and SiO2 by surface activated bonding method using Si ultrathin films

AU - Utsumi,Jun

AU - Ide,Kensuke

AU - Ichiyanagi,Yuko

PY - 2016/2/1

Y1 - 2016/2/1

N2 - The bonding of metal electrodes and insulator hybrid interfaces is one of the key techniques in three-dimensional integration technology. Metal materials such as Cu or Al are easily directly bonded by surface activated bonding at room temperature, but insulator materials such as SiO2 or SiN are not. Using only Si ultrathin films, we propose a new bonding technique for SiO2/SiO2 bonding at room temperature. Two SiO2 surfaces, on which Si thin films were deposited, were contacted in vacuum. We confirmed that the thickness of the layer was about 7 nm by transmission electron microscopy observation and that the layer was non crystalline by electron energy loss spectroscopy analysis. No metal material was found in the bonding interface by energy-dispersive X-ray spectroscopy analysis. The surface energy was about 1 J/m2, and the bonding strength was more than 25MPa. This bonding technique was successfully realized to enable SiO2/SiO2 bonding without a metal adhesion layer.

AB - The bonding of metal electrodes and insulator hybrid interfaces is one of the key techniques in three-dimensional integration technology. Metal materials such as Cu or Al are easily directly bonded by surface activated bonding at room temperature, but insulator materials such as SiO2 or SiN are not. Using only Si ultrathin films, we propose a new bonding technique for SiO2/SiO2 bonding at room temperature. Two SiO2 surfaces, on which Si thin films were deposited, were contacted in vacuum. We confirmed that the thickness of the layer was about 7 nm by transmission electron microscopy observation and that the layer was non crystalline by electron energy loss spectroscopy analysis. No metal material was found in the bonding interface by energy-dispersive X-ray spectroscopy analysis. The surface energy was about 1 J/m2, and the bonding strength was more than 25MPa. This bonding technique was successfully realized to enable SiO2/SiO2 bonding without a metal adhesion layer.

UR - http://www.scopus.com/inward/record.url?scp=84961324602&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84961324602&partnerID=8YFLogxK

U2 - 10.7567/JJAP.55.026503

DO - 10.7567/JJAP.55.026503

M3 - Article

VL - 55

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

T2 - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 2

M1 - 026503

ER -