Preparation of amorphous fluorinated carbon film using low global-warming potential gas, C4F6, by plasma enhanced chemical vapor deposition

Hiroki Watanabe, Takumi Tokimitsu, Jyunko Shiga, Nobuo Haneji, Yukihiro Shimogaki

    • 2 Citations

    Abstract

    Low-dielectric constant amorphous fluorinated carbon (a-C:F) films were prepared using plasma enhanced chemical vapor deposition (PECVD) from C 4F6 gas, which is expected to be a substitutional gas due to its low global-warming potential (GWP). Kinetic analysis revealed that C 4F6 (hexafluoro-1,3-butadiene) or related molecules were a main deposition precursor and that C4F6 concentration in the plasma affected the C-CF bond ratio in the film. The contribution of orientational polarization to total dielectric constant was related to the C-CF bond ratio. The change in dielectric constant induced by changing residence time in the reactor or by changing Ar dilution of C4F6 gas was due mostly to the change in orientational polarization. Controlling the C4F6 concentration in the plasma by changing residence time is the key to controlling orientational polarization and dielectric constant. ©2006 The Japan Society of Applied Physics.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume45
    Issue number4-7
    DOIs
    StatePublished - 2006 Feb 3

    Fingerprint

    Permittivity
    Gases
    Polarization
    Amorphous carbon
    Global warming
    Plasma enhanced chemical vapor deposition
    Plasmas
    Carbon films
    Amorphous films
    Butadiene
    Dilution
    Molecules
    Kinetics

    Keywords

    • C-CF bond
    • CF
    • Dielectric constant
    • GWP
    • PECVD

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Preparation of amorphous fluorinated carbon film using low global-warming potential gas, C4F6, by plasma enhanced chemical vapor deposition. / Watanabe, Hiroki; Tokimitsu, Takumi; Shiga, Jyunko; Haneji, Nobuo; Shimogaki, Yukihiro.

    In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 45, No. 4-7, 03.02.2006.

    Research output: Contribution to journalArticle

    Watanabe, Hiroki; Tokimitsu, Takumi; Shiga, Jyunko; Haneji, Nobuo; Shimogaki, Yukihiro / Preparation of amorphous fluorinated carbon film using low global-warming potential gas, C4F6, by plasma enhanced chemical vapor deposition.

    In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 45, No. 4-7, 03.02.2006.

    Research output: Contribution to journalArticle

    @article{c0bdfb0c1f264cfd8741025be8b7484b,
    title = "Preparation of amorphous fluorinated carbon film using low global-warming potential gas, C4F6, by plasma enhanced chemical vapor deposition",
    keywords = "C-CF bond, CF, Dielectric constant, GWP, PECVD",
    author = "Hiroki Watanabe and Takumi Tokimitsu and Jyunko Shiga and Nobuo Haneji and Yukihiro Shimogaki",
    year = "2006",
    month = "2",
    doi = "10.1143/JJAP.45.L151",
    volume = "45",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "4-7",

    }

    TY - JOUR

    T1 - Preparation of amorphous fluorinated carbon film using low global-warming potential gas, C4F6, by plasma enhanced chemical vapor deposition

    AU - Watanabe,Hiroki

    AU - Tokimitsu,Takumi

    AU - Shiga,Jyunko

    AU - Haneji,Nobuo

    AU - Shimogaki,Yukihiro

    PY - 2006/2/3

    Y1 - 2006/2/3

    N2 - Low-dielectric constant amorphous fluorinated carbon (a-C:F) films were prepared using plasma enhanced chemical vapor deposition (PECVD) from C 4F6 gas, which is expected to be a substitutional gas due to its low global-warming potential (GWP). Kinetic analysis revealed that C 4F6 (hexafluoro-1,3-butadiene) or related molecules were a main deposition precursor and that C4F6 concentration in the plasma affected the C-CF bond ratio in the film. The contribution of orientational polarization to total dielectric constant was related to the C-CF bond ratio. The change in dielectric constant induced by changing residence time in the reactor or by changing Ar dilution of C4F6 gas was due mostly to the change in orientational polarization. Controlling the C4F6 concentration in the plasma by changing residence time is the key to controlling orientational polarization and dielectric constant. ©2006 The Japan Society of Applied Physics.

    AB - Low-dielectric constant amorphous fluorinated carbon (a-C:F) films were prepared using plasma enhanced chemical vapor deposition (PECVD) from C 4F6 gas, which is expected to be a substitutional gas due to its low global-warming potential (GWP). Kinetic analysis revealed that C 4F6 (hexafluoro-1,3-butadiene) or related molecules were a main deposition precursor and that C4F6 concentration in the plasma affected the C-CF bond ratio in the film. The contribution of orientational polarization to total dielectric constant was related to the C-CF bond ratio. The change in dielectric constant induced by changing residence time in the reactor or by changing Ar dilution of C4F6 gas was due mostly to the change in orientational polarization. Controlling the C4F6 concentration in the plasma by changing residence time is the key to controlling orientational polarization and dielectric constant. ©2006 The Japan Society of Applied Physics.

    KW - C-CF bond

    KW - CF

    KW - Dielectric constant

    KW - GWP

    KW - PECVD

    UR - http://www.scopus.com/inward/record.url?scp=32044458597&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=32044458597&partnerID=8YFLogxK

    U2 - 10.1143/JJAP.45.L151

    DO - 10.1143/JJAP.45.L151

    M3 - Article

    VL - 45

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    T2 - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 4-7

    ER -