Material evaluation and development support project for high current SiC power module

Tomohiro Iguchi, Akio Takahashi, Hitoshi Habuka

Abstract

Power semiconductor devices play an important role in the technology for carbon dioxide reduction. This report presents a brief history of technological trends in silicon carbide (SiC) power devices with respect to practical use. The report presents the outline of the 4-year KAMOME project that started 2011. The report includes discussion on material development and evaluation of a high current SiC power module.

Original languageEnglish
Title of host publicationProceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages131-134
Number of pages4
Volume2016-July
ISBN (Electronic)9781467387682
DOIs
StatePublished - 2016 Jul 25
Event28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic

Other

Other28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
CountryCzech Republic
CityPrague
Period16/6/1216/6/16

Fingerprint

Silicon carbide
Semiconductor devices
Carbon dioxide
History

Keywords

  • Material evaluation
  • Power module
  • Silicon carbide

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Iguchi, T., Takahashi, A., & Habuka, H. (2016). Material evaluation and development support project for high current SiC power module. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. (Vol. 2016-July, pp. 131-134). [7520795] Institute of Electrical and Electronics Engineers Inc.. DOI: 10.1109/ISPSD.2016.7520795

Material evaluation and development support project for high current SiC power module. / Iguchi, Tomohiro; Takahashi, Akio; Habuka, Hitoshi.

Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Vol. 2016-July Institute of Electrical and Electronics Engineers Inc., 2016. p. 131-134 7520795.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Iguchi, T, Takahashi, A & Habuka, H 2016, Material evaluation and development support project for high current SiC power module. in Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. vol. 2016-July, 7520795, Institute of Electrical and Electronics Engineers Inc., pp. 131-134, 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016, Prague, Czech Republic, 12-16 June. DOI: 10.1109/ISPSD.2016.7520795
Iguchi T, Takahashi A, Habuka H. Material evaluation and development support project for high current SiC power module. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Vol. 2016-July. Institute of Electrical and Electronics Engineers Inc.2016. p. 131-134. 7520795. Available from, DOI: 10.1109/ISPSD.2016.7520795

Iguchi, Tomohiro; Takahashi, Akio; Habuka, Hitoshi / Material evaluation and development support project for high current SiC power module.

Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Vol. 2016-July Institute of Electrical and Electronics Engineers Inc., 2016. p. 131-134 7520795.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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