Influence of heterointerface abruptness on electrorefractive effect in InGaAs/InAlAs five-layer asymmetric coupled quantum well

Yuji Iseri, Taro Arakawa, Kunio Tada, Nobuo Haneji

    • 1 Citations

    Abstract

    An InGaAs/InAlAs five layer asymmetric coupled quantum well (FACQW) is expected to produce a large electrorefractive index change and is a promising structure for high-performance phase modulators. However, because an FACQW is composed of ultrathin layers, poor abruptness in heterointerface may deteriorate the electrorefractive effect. We therefore investigated theoretically the influence of abruptness of heterointerfaces in an FACQW on the electrorefractive effect of the FACQW. In the analysis, it is assumed that the composition profile in a heterointerface is exponential, and the thickness of the transition layer L is defined. With the increase in L, the absorption edge is blue-shifted, which deteriorates the electrorefractive index change of the FACQW especially in the case of L ≥ 3 monolayer (ML). In addition, we propose an improved FACQW structure, which is expected to exhibit a large electrorefractive index even in the case of L = 3 ML. © 2010 The Japan Society of Applied Physics.

    Original languageEnglish
    Article number04DG04
    JournalJapanese Journal of Applied Physics
    Volume49
    Issue number4 PART 2
    DOIs
    StatePublished - 2010 Apr 1

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    Semiconductor quantum wells
    Monolayers
    Modulators
    Chemical analysis

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Influence of heterointerface abruptness on electrorefractive effect in InGaAs/InAlAs five-layer asymmetric coupled quantum well. / Iseri, Yuji; Arakawa, Taro; Tada, Kunio; Haneji, Nobuo.

    In: Japanese Journal of Applied Physics, Vol. 49, No. 4 PART 2, 04DG04, 01.04.2010.

    Research output: Contribution to journalArticle

    Iseri, Yuji; Arakawa, Taro; Tada, Kunio; Haneji, Nobuo / Influence of heterointerface abruptness on electrorefractive effect in InGaAs/InAlAs five-layer asymmetric coupled quantum well.

    In: Japanese Journal of Applied Physics, Vol. 49, No. 4 PART 2, 04DG04, 01.04.2010.

    Research output: Contribution to journalArticle

    @article{c915e36d11404c49911f5febf7205dd5,
    title = "Influence of heterointerface abruptness on electrorefractive effect in InGaAs/InAlAs five-layer asymmetric coupled quantum well",
    author = "Yuji Iseri and Taro Arakawa and Kunio Tada and Nobuo Haneji",
    year = "2010",
    month = "4",
    doi = "10.1143/JJAP.49.04DG04",
    volume = "49",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "4 PART 2",

    }

    TY - JOUR

    T1 - Influence of heterointerface abruptness on electrorefractive effect in InGaAs/InAlAs five-layer asymmetric coupled quantum well

    AU - Iseri,Yuji

    AU - Arakawa,Taro

    AU - Tada,Kunio

    AU - Haneji,Nobuo

    PY - 2010/4/1

    Y1 - 2010/4/1

    N2 - An InGaAs/InAlAs five layer asymmetric coupled quantum well (FACQW) is expected to produce a large electrorefractive index change and is a promising structure for high-performance phase modulators. However, because an FACQW is composed of ultrathin layers, poor abruptness in heterointerface may deteriorate the electrorefractive effect. We therefore investigated theoretically the influence of abruptness of heterointerfaces in an FACQW on the electrorefractive effect of the FACQW. In the analysis, it is assumed that the composition profile in a heterointerface is exponential, and the thickness of the transition layer L is defined. With the increase in L, the absorption edge is blue-shifted, which deteriorates the electrorefractive index change of the FACQW especially in the case of L ≥ 3 monolayer (ML). In addition, we propose an improved FACQW structure, which is expected to exhibit a large electrorefractive index even in the case of L = 3 ML. © 2010 The Japan Society of Applied Physics.

    AB - An InGaAs/InAlAs five layer asymmetric coupled quantum well (FACQW) is expected to produce a large electrorefractive index change and is a promising structure for high-performance phase modulators. However, because an FACQW is composed of ultrathin layers, poor abruptness in heterointerface may deteriorate the electrorefractive effect. We therefore investigated theoretically the influence of abruptness of heterointerfaces in an FACQW on the electrorefractive effect of the FACQW. In the analysis, it is assumed that the composition profile in a heterointerface is exponential, and the thickness of the transition layer L is defined. With the increase in L, the absorption edge is blue-shifted, which deteriorates the electrorefractive index change of the FACQW especially in the case of L ≥ 3 monolayer (ML). In addition, we propose an improved FACQW structure, which is expected to exhibit a large electrorefractive index even in the case of L = 3 ML. © 2010 The Japan Society of Applied Physics.

    UR - http://www.scopus.com/inward/record.url?scp=77952704168&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=77952704168&partnerID=8YFLogxK

    U2 - 10.1143/JJAP.49.04DG04

    DO - 10.1143/JJAP.49.04DG04

    M3 - Article

    VL - 49

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    T2 - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 4 PART 2

    M1 - 04DG04

    ER -