In situ measurement for evaluating temperature change related to silicon film formation in a SiHCl3-H2 system

Kento Miyazaki, Ayumi Saito, Hitoshi Habuka

    Abstract

    The temperature change related to silicon film formation in a trichlorosilane-hydrogen system was evaluated by an in situ monitoring method using the langasite crystal microbalance (LCM). First, the time constants for the LCM frequency change due to the surface and gas phase temperature change were determined to be less than two hundred seconds. The continuous LCM frequency decrease appearing two hundred seconds after changing the trichlorosilane gas concentration was assigned to the weight increase by the film formation in a steady state. Based on an evaluation of the difference in the LCM frequency between those with and without the heat change related to the film formation, the surface temperature decrease caused by slightly changing the trichlorosilane concentration was comparable to one degree.

    Original languageEnglish
    Pages (from-to)P16-P20
    JournalECS Journal of Solid State Science and Technology
    Volume5
    Issue number2
    DOIs
    StatePublished - 2016

    Fingerprint

    Crystals
    Temperature
    Silicon
    Gases
    Hydrogen
    Monitoring

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials

    Cite this

    In situ measurement for evaluating temperature change related to silicon film formation in a SiHCl3-H2 system. / Miyazaki, Kento; Saito, Ayumi; Habuka, Hitoshi.

    In: ECS Journal of Solid State Science and Technology, Vol. 5, No. 2, 2016, p. P16-P20.

    Research output: Contribution to journalArticle

    Miyazaki, Kento; Saito, Ayumi; Habuka, Hitoshi / In situ measurement for evaluating temperature change related to silicon film formation in a SiHCl3-H2 system.

    In: ECS Journal of Solid State Science and Technology, Vol. 5, No. 2, 2016, p. P16-P20.

    Research output: Contribution to journalArticle

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    AU - Saito,Ayumi

    AU - Habuka,Hitoshi

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    N2 - The temperature change related to silicon film formation in a trichlorosilane-hydrogen system was evaluated by an in situ monitoring method using the langasite crystal microbalance (LCM). First, the time constants for the LCM frequency change due to the surface and gas phase temperature change were determined to be less than two hundred seconds. The continuous LCM frequency decrease appearing two hundred seconds after changing the trichlorosilane gas concentration was assigned to the weight increase by the film formation in a steady state. Based on an evaluation of the difference in the LCM frequency between those with and without the heat change related to the film formation, the surface temperature decrease caused by slightly changing the trichlorosilane concentration was comparable to one degree.

    AB - The temperature change related to silicon film formation in a trichlorosilane-hydrogen system was evaluated by an in situ monitoring method using the langasite crystal microbalance (LCM). First, the time constants for the LCM frequency change due to the surface and gas phase temperature change were determined to be less than two hundred seconds. The continuous LCM frequency decrease appearing two hundred seconds after changing the trichlorosilane gas concentration was assigned to the weight increase by the film formation in a steady state. Based on an evaluation of the difference in the LCM frequency between those with and without the heat change related to the film formation, the surface temperature decrease caused by slightly changing the trichlorosilane concentration was comparable to one degree.

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