In situ cleaning process of silicon carbide epitaxial reactor for removing film-type deposition formed on susceptor

Kosuke Mizuno, Hitoshi Habuka, Yuuki Ishida, Toshiyuki Ohno

Abstract

The in situ cleaning process of a silicon carbide epitaxial reactor was developed using chlorine trifluoride gas for removing the film-type silicon carbide deposition formed on a susceptor. By adjusting the etching temperature to less than 330 °C, the formed silicon carbide films could be removed without significant damage to the susceptor.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publications Ltd
Pages237-240
Number of pages4
Volume858
ISBN (Print)9783035710427
DOIs
StatePublished - 2016
Event16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy

Publication series

NameMaterials Science Forum
Volume858
ISSN (Print)02555476

Other

Other16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
CountryItaly
CitySicily
Period15/10/415/10/9

Fingerprint

Silicon carbide
Cleaning
Chlorine
Etching
Gases
Temperature

Keywords

  • Chlorine trifluoride
  • Epitaxial film formation
  • Reactor cleaning

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Mizuno, K., Habuka, H., Ishida, Y., & Ohno, T. (2016). In situ cleaning process of silicon carbide epitaxial reactor for removing film-type deposition formed on susceptor. In Materials Science Forum. (Vol. 858, pp. 237-240). (Materials Science Forum; Vol. 858). Trans Tech Publications Ltd. DOI: 10.4028/www.scientific.net/MSF.858.237

In situ cleaning process of silicon carbide epitaxial reactor for removing film-type deposition formed on susceptor. / Mizuno, Kosuke; Habuka, Hitoshi; Ishida, Yuuki; Ohno, Toshiyuki.

Materials Science Forum. Vol. 858 Trans Tech Publications Ltd, 2016. p. 237-240 (Materials Science Forum; Vol. 858).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mizuno, K, Habuka, H, Ishida, Y & Ohno, T 2016, In situ cleaning process of silicon carbide epitaxial reactor for removing film-type deposition formed on susceptor. in Materials Science Forum. vol. 858, Materials Science Forum, vol. 858, Trans Tech Publications Ltd, pp. 237-240, 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Sicily, Italy, 4-9 October. DOI: 10.4028/www.scientific.net/MSF.858.237
Mizuno K, Habuka H, Ishida Y, Ohno T. In situ cleaning process of silicon carbide epitaxial reactor for removing film-type deposition formed on susceptor. In Materials Science Forum. Vol. 858. Trans Tech Publications Ltd. 2016. p. 237-240. (Materials Science Forum). Available from, DOI: 10.4028/www.scientific.net/MSF.858.237

Mizuno, Kosuke; Habuka, Hitoshi; Ishida, Yuuki; Ohno, Toshiyuki / In situ cleaning process of silicon carbide epitaxial reactor for removing film-type deposition formed on susceptor.

Materials Science Forum. Vol. 858 Trans Tech Publications Ltd, 2016. p. 237-240 (Materials Science Forum; Vol. 858).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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