Formation and removal of carbon film on silicon carbide surface using chlorine trifluoride gas

Asumi Hirooka, Hitoshi Habuka, Yoshinao Takahashi, Tomohisa Kato

Abstract

A carbon film was formed and reduced by etching of the silicon carbide surface using chlorine trifluoride gas. The high rate silicon carbide etching at high temperatures, typically 600-750°C, simultaneously produced the by-product of a carbon film on the silicon carbide surface. It was often thicker than several hundred nanometers. The formed carbon film could be removed by the same etchant, chlorine trifluoride gas, at temperatures lower than 400°C. For the practical use of the high rate etching, a combination of a high and low temperature etching is useful.

Original languageEnglish
Pages (from-to)P441-P445
JournalECS Journal of Solid State Science and Technology
Volume5
Issue number7
DOIs
StatePublished - 2016

Fingerprint

Carbon films
Silicon carbide
Etching
Chlorine
Gases
Temperature
Byproducts
Removal

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Formation and removal of carbon film on silicon carbide surface using chlorine trifluoride gas. / Hirooka, Asumi; Habuka, Hitoshi; Takahashi, Yoshinao; Kato, Tomohisa.

In: ECS Journal of Solid State Science and Technology, Vol. 5, No. 7, 2016, p. P441-P445.

Research output: Contribution to journalArticle

Hirooka, Asumi; Habuka, Hitoshi; Takahashi, Yoshinao; Kato, Tomohisa / Formation and removal of carbon film on silicon carbide surface using chlorine trifluoride gas.

In: ECS Journal of Solid State Science and Technology, Vol. 5, No. 7, 2016, p. P441-P445.

Research output: Contribution to journalArticle

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