Etching rate behavior of 4H-silicon carbide epitaxial film using chlorine trifluoride gas

Asumi Hirooka, Hitoshi Habuka, Tomohisa Kato

Abstract

4H-silicon carbide epitaxial film was etched using chlorine trifluoride gas. The etch rate of C-face at 2-100 % and at various temperatures was 0.8 – 10 μm min-1, which was comparable to those of the silicon carbide substrates. The surface morphology observed after the etching was very smooth, in contrast to that of the substrate showing many pits.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publications Ltd
Pages715-718
Number of pages4
Volume858
ISBN (Print)9783035710427
DOIs
StatePublished - 2016
Event16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy

Publication series

NameMaterials Science Forum
Volume858
ISSN (Print)02555476

Other

Other16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
CountryItaly
CitySicily
Period15/10/415/10/9

Fingerprint

Silicon carbide
Epitaxial films
Chlorine
Etching
Substrates
Gases
Surface morphology
Temperature

Keywords

  • Chlorine trifluoride gas
  • Epitaxial film
  • Etching rate

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Hirooka, A., Habuka, H., & Kato, T. (2016). Etching rate behavior of 4H-silicon carbide epitaxial film using chlorine trifluoride gas. In Materials Science Forum. (Vol. 858, pp. 715-718). (Materials Science Forum; Vol. 858). Trans Tech Publications Ltd. DOI: 10.4028/www.scientific.net/MSF.858.715

Etching rate behavior of 4H-silicon carbide epitaxial film using chlorine trifluoride gas. / Hirooka, Asumi; Habuka, Hitoshi; Kato, Tomohisa.

Materials Science Forum. Vol. 858 Trans Tech Publications Ltd, 2016. p. 715-718 (Materials Science Forum; Vol. 858).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hirooka, A, Habuka, H & Kato, T 2016, Etching rate behavior of 4H-silicon carbide epitaxial film using chlorine trifluoride gas. in Materials Science Forum. vol. 858, Materials Science Forum, vol. 858, Trans Tech Publications Ltd, pp. 715-718, 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Sicily, Italy, 4-9 October. DOI: 10.4028/www.scientific.net/MSF.858.715
Hirooka A, Habuka H, Kato T. Etching rate behavior of 4H-silicon carbide epitaxial film using chlorine trifluoride gas. In Materials Science Forum. Vol. 858. Trans Tech Publications Ltd. 2016. p. 715-718. (Materials Science Forum). Available from, DOI: 10.4028/www.scientific.net/MSF.858.715

Hirooka, Asumi; Habuka, Hitoshi; Kato, Tomohisa / Etching rate behavior of 4H-silicon carbide epitaxial film using chlorine trifluoride gas.

Materials Science Forum. Vol. 858 Trans Tech Publications Ltd, 2016. p. 715-718 (Materials Science Forum; Vol. 858).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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