Bonding of SiO2 and SiO2 at room temperature using Si ultrathin film

J. Utsumi, K. Ide, Y. Ichiyanagi

Abstract

The bonding of metal electrode and insulator hybrid interfaces is very important in three-dimensional integration technology. Surface activated bonding (SAB) is expected to be a suitable method for three-dimensional integration technology, as the bonding method is carried out at room or low temperatures. Though metal materials such as Cu or Al are easy to directly bond using the SAB method, insulator materials such as SiO2 and SiN are more difficult. In this study, we examined the bonding technique at room temperature using only Si ultrathin films for the insulator material, and investigated the relationship between the SiO2/SiO2 bonding strength and the thickness of the Si ultrathin film. We confirmed that the surface energy was about 1 J/m2 for a Si film thickness of more than about 3 nm.

Original languageEnglish
Title of host publicationSemiconductor Wafer Bonding: Science, Technology and Applications 14
PublisherElectrochemical Society Inc.
Pages355-361
Number of pages7
Volume75
Edition9
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2016
EventSymposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting - Honolulu, United States

Other

OtherSymposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period16/10/216/10/7

Fingerprint

Ultrathin films
Temperature
Metals
Interfacial energy
Film thickness
Electrodes

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Utsumi, J., Ide, K., & Ichiyanagi, Y. (2016). Bonding of SiO2 and SiO2 at room temperature using Si ultrathin film. In Semiconductor Wafer Bonding: Science, Technology and Applications 14. (9 ed., Vol. 75, pp. 355-361). Electrochemical Society Inc.. DOI: 10.1149/07509.0355ecst

Bonding of SiO2 and SiO2 at room temperature using Si ultrathin film. / Utsumi, J.; Ide, K.; Ichiyanagi, Y.

Semiconductor Wafer Bonding: Science, Technology and Applications 14. Vol. 75 9. ed. Electrochemical Society Inc., 2016. p. 355-361.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Utsumi, J, Ide, K & Ichiyanagi, Y 2016, Bonding of SiO2 and SiO2 at room temperature using Si ultrathin film. in Semiconductor Wafer Bonding: Science, Technology and Applications 14. 9 edn, vol. 75, Electrochemical Society Inc., pp. 355-361, Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 2-7 October. DOI: 10.1149/07509.0355ecst
Utsumi J, Ide K, Ichiyanagi Y. Bonding of SiO2 and SiO2 at room temperature using Si ultrathin film. In Semiconductor Wafer Bonding: Science, Technology and Applications 14. 9 ed. Vol. 75. Electrochemical Society Inc.2016. p. 355-361. Available from, DOI: 10.1149/07509.0355ecst

Utsumi, J.; Ide, K.; Ichiyanagi, Y. / Bonding of SiO2 and SiO2 at room temperature using Si ultrathin film.

Semiconductor Wafer Bonding: Science, Technology and Applications 14. Vol. 75 9. ed. Electrochemical Society Inc., 2016. p. 355-361.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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