Analysis of the electrorefractive effect in Ge/SiGe coupled quantum well for silicon based optical modulators

Y. Iseri, H. Yamada, T. Arakawa, K. Tada, N. Haneji

    Abstract

    A Ge/SiGe coupled quantum well for optical modulators based on phase modulation was proposed and its electrorefractive characteristics are theoretically analyzed using the k·p perturbation theory. This structure is promising for low-voltage Mach Zehnder modulators.

    Original languageEnglish
    Title of host publicationTechnical Digest - 15th OptoElectronics and Communications Conference, OECC2010
    Pages678-679
    Number of pages2
    StatePublished - 2010 Nov 29
    Event15th OptoElectronics and Communications Conference, OECC2010 - Sapporo, Japan

    Other

    Other15th OptoElectronics and Communications Conference, OECC2010
    CountryJapan
    CitySapporo
    Period10/7/510/7/9

    Fingerprint

    Light modulators
    Semiconductor quantum wells
    Phase modulation
    Modulators
    Mach number
    Silicon

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Cite this

    Iseri, Y., Yamada, H., Arakawa, T., Tada, K., & Haneji, N. (2010). Analysis of the electrorefractive effect in Ge/SiGe coupled quantum well for silicon based optical modulators. In Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010. (pp. 678-679). [5588387]

    Analysis of the electrorefractive effect in Ge/SiGe coupled quantum well for silicon based optical modulators. / Iseri, Y.; Yamada, H.; Arakawa, T.; Tada, K.; Haneji, N.

    Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010. 2010. p. 678-679 5588387.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Iseri, Y, Yamada, H, Arakawa, T, Tada, K & Haneji, N 2010, Analysis of the electrorefractive effect in Ge/SiGe coupled quantum well for silicon based optical modulators. in Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010., 5588387, pp. 678-679, 15th OptoElectronics and Communications Conference, OECC2010, Sapporo, Japan, 5-9 July.
    Iseri Y, Yamada H, Arakawa T, Tada K, Haneji N. Analysis of the electrorefractive effect in Ge/SiGe coupled quantum well for silicon based optical modulators. In Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010. 2010. p. 678-679. 5588387.

    Iseri, Y.; Yamada, H.; Arakawa, T.; Tada, K.; Haneji, N. / Analysis of the electrorefractive effect in Ge/SiGe coupled quantum well for silicon based optical modulators.

    Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010. 2010. p. 678-679 5588387.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

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