### Abstract

A Ge/SiGe coupled quantum well (CQW) for optical modulators based on phase modulation has been proposed and studied theoretically. First we analyze quantized energies and wavefunctions of electrons and holes, and valence band dispersions for holes by solving the Schrödinger equation using the propagation matrix method and the k·p perturbation theory with the 4×4 LuttingerKohn Hamiltonian. The Ge/SiGe CQW is expected to exhibit unique quantum-confined Stark effect (QCSE) and polarization-independent large electrorefractive index change in transparent wavelength range. In addition, we calculated the driving voltage of a phase modulator with the multiple Ge/SiGe CQW. The product of a half-wave voltage and a phase shifter length V _{π}L_{p} is estimated to be about 0.31 V cm. The proposed CQW structure is a promising candidate for Si-based optoelectronic devices such as the MachZehnder interferometer optical modulators and switches. © 2011 Elsevier B.V. All Rights Reserved.

Original language | English |
---|---|

Pages (from-to) | 1433-1438 |

Number of pages | 6 |

Journal | Physica E: Low-Dimensional Systems and Nanostructures |

Volume | 43 |

Issue number | 8 |

DOIs | |

State | Published - 2011 Jun 1 |

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### ASJC Scopus subject areas

- Condensed Matter Physics
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials

### Cite this

*Physica E: Low-Dimensional Systems and Nanostructures*,

*43*(8), 1433-1438. DOI: 10.1016/j.physe.2011.03.021

**Analysis of electrorefractive index change in Ge/SiGe coupled quantum well for low-voltage silicon-based optical modulators.** / Iseri, Y.; Yamada, H.; Goda, Y.; Arakawa, T.; Tada, K.; Haneji, N.

Research output: Contribution to journal › Article

*Physica E: Low-Dimensional Systems and Nanostructures*, vol 43, no. 8, pp. 1433-1438. DOI: 10.1016/j.physe.2011.03.021

}

TY - JOUR

T1 - Analysis of electrorefractive index change in Ge/SiGe coupled quantum well for low-voltage silicon-based optical modulators

AU - Iseri,Y.

AU - Yamada,H.

AU - Goda,Y.

AU - Arakawa,T.

AU - Tada,K.

AU - Haneji,N.

PY - 2011/6/1

Y1 - 2011/6/1

N2 - A Ge/SiGe coupled quantum well (CQW) for optical modulators based on phase modulation has been proposed and studied theoretically. First we analyze quantized energies and wavefunctions of electrons and holes, and valence band dispersions for holes by solving the Schrödinger equation using the propagation matrix method and the k·p perturbation theory with the 4×4 LuttingerKohn Hamiltonian. The Ge/SiGe CQW is expected to exhibit unique quantum-confined Stark effect (QCSE) and polarization-independent large electrorefractive index change in transparent wavelength range. In addition, we calculated the driving voltage of a phase modulator with the multiple Ge/SiGe CQW. The product of a half-wave voltage and a phase shifter length V πLp is estimated to be about 0.31 V cm. The proposed CQW structure is a promising candidate for Si-based optoelectronic devices such as the MachZehnder interferometer optical modulators and switches. © 2011 Elsevier B.V. All Rights Reserved.

AB - A Ge/SiGe coupled quantum well (CQW) for optical modulators based on phase modulation has been proposed and studied theoretically. First we analyze quantized energies and wavefunctions of electrons and holes, and valence band dispersions for holes by solving the Schrödinger equation using the propagation matrix method and the k·p perturbation theory with the 4×4 LuttingerKohn Hamiltonian. The Ge/SiGe CQW is expected to exhibit unique quantum-confined Stark effect (QCSE) and polarization-independent large electrorefractive index change in transparent wavelength range. In addition, we calculated the driving voltage of a phase modulator with the multiple Ge/SiGe CQW. The product of a half-wave voltage and a phase shifter length V πLp is estimated to be about 0.31 V cm. The proposed CQW structure is a promising candidate for Si-based optoelectronic devices such as the MachZehnder interferometer optical modulators and switches. © 2011 Elsevier B.V. All Rights Reserved.

UR - http://www.scopus.com/inward/record.url?scp=79957625193&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79957625193&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2011.03.021

DO - 10.1016/j.physe.2011.03.021

M3 - Article

VL - 43

SP - 1433

EP - 1438

JO - Physica E: Low-Dimensional Systems and Nanostructures

T2 - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 8

ER -