Analysis of electrorefractive index change in Ge/SiGe coupled quantum well for low-voltage silicon-based optical modulators

Y. Iseri, H. Yamada, Y. Goda, T. Arakawa, K. Tada, N. Haneji

    • 3 Citations

    Abstract

    A Ge/SiGe coupled quantum well (CQW) for optical modulators based on phase modulation has been proposed and studied theoretically. First we analyze quantized energies and wavefunctions of electrons and holes, and valence band dispersions for holes by solving the Schrödinger equation using the propagation matrix method and the k·p perturbation theory with the 4×4 LuttingerKohn Hamiltonian. The Ge/SiGe CQW is expected to exhibit unique quantum-confined Stark effect (QCSE) and polarization-independent large electrorefractive index change in transparent wavelength range. In addition, we calculated the driving voltage of a phase modulator with the multiple Ge/SiGe CQW. The product of a half-wave voltage and a phase shifter length V πLp is estimated to be about 0.31 V cm. The proposed CQW structure is a promising candidate for Si-based optoelectronic devices such as the MachZehnder interferometer optical modulators and switches. © 2011 Elsevier B.V. All Rights Reserved.

    Original languageEnglish
    Pages (from-to)1433-1438
    Number of pages6
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Volume43
    Issue number8
    DOIs
    StatePublished - 2011 Jun 1

    Fingerprint

    Semiconductor quantum wells
    Light modulators
    Stark effect
    Optical switches
    Phase shifters
    Phase modulation
    Wave functions
    Valence bands
    Dispersions
    Optoelectronic devices
    Interferometers
    Modulators
    Polarization
    Silicon
    Wavelength
    Electrons

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Atomic and Molecular Physics, and Optics
    • Electronic, Optical and Magnetic Materials

    Cite this

    Analysis of electrorefractive index change in Ge/SiGe coupled quantum well for low-voltage silicon-based optical modulators. / Iseri, Y.; Yamada, H.; Goda, Y.; Arakawa, T.; Tada, K.; Haneji, N.

    In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 43, No. 8, 01.06.2011, p. 1433-1438.

    Research output: Contribution to journalArticle

    Iseri, Y.; Yamada, H.; Goda, Y.; Arakawa, T.; Tada, K.; Haneji, N. / Analysis of electrorefractive index change in Ge/SiGe coupled quantum well for low-voltage silicon-based optical modulators.

    In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 43, No. 8, 01.06.2011, p. 1433-1438.

    Research output: Contribution to journalArticle

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    author = "Y. Iseri and H. Yamada and Y. Goda and T. Arakawa and K. Tada and N. Haneji",
    year = "2011",
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    AU - Iseri,Y.

    AU - Yamada,H.

    AU - Goda,Y.

    AU - Arakawa,T.

    AU - Tada,K.

    AU - Haneji,N.

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    N2 - A Ge/SiGe coupled quantum well (CQW) for optical modulators based on phase modulation has been proposed and studied theoretically. First we analyze quantized energies and wavefunctions of electrons and holes, and valence band dispersions for holes by solving the Schrödinger equation using the propagation matrix method and the k·p perturbation theory with the 4×4 LuttingerKohn Hamiltonian. The Ge/SiGe CQW is expected to exhibit unique quantum-confined Stark effect (QCSE) and polarization-independent large electrorefractive index change in transparent wavelength range. In addition, we calculated the driving voltage of a phase modulator with the multiple Ge/SiGe CQW. The product of a half-wave voltage and a phase shifter length V πLp is estimated to be about 0.31 V cm. The proposed CQW structure is a promising candidate for Si-based optoelectronic devices such as the MachZehnder interferometer optical modulators and switches. © 2011 Elsevier B.V. All Rights Reserved.

    AB - A Ge/SiGe coupled quantum well (CQW) for optical modulators based on phase modulation has been proposed and studied theoretically. First we analyze quantized energies and wavefunctions of electrons and holes, and valence band dispersions for holes by solving the Schrödinger equation using the propagation matrix method and the k·p perturbation theory with the 4×4 LuttingerKohn Hamiltonian. The Ge/SiGe CQW is expected to exhibit unique quantum-confined Stark effect (QCSE) and polarization-independent large electrorefractive index change in transparent wavelength range. In addition, we calculated the driving voltage of a phase modulator with the multiple Ge/SiGe CQW. The product of a half-wave voltage and a phase shifter length V πLp is estimated to be about 0.31 V cm. The proposed CQW structure is a promising candidate for Si-based optoelectronic devices such as the MachZehnder interferometer optical modulators and switches. © 2011 Elsevier B.V. All Rights Reserved.

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