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2016

Etching rate behavior of 4H-silicon carbide epitaxial film using chlorine trifluoride gas

Hirooka, A., Habuka, H. & Kato, T. 2016 Materials Science Forum. Trans Tech Publications Ltd, Vol. 858, p. 715-718 4 p. (Materials Science Forum; vol. 858)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Epitaxial films
Chlorine
Etching
Substrates

Formation and removal of carbon film on silicon carbide surface using chlorine trifluoride gas

Hirooka, A., Habuka, H., Takahashi, Y. & Kato, T. 2016 In : ECS Journal of Solid State Science and Technology. 5, 7, p. P441-P445

Research output: Contribution to journalArticle

Carbon films
Silicon carbide
Etching
Chlorine
Gases

In situ cleaning process of silicon carbide epitaxial reactor for removing film-type deposition formed on susceptor

Mizuno, K., Habuka, H., Ishida, Y. & Ohno, T. 2016 Materials Science Forum. Trans Tech Publications Ltd, Vol. 858, p. 237-240 4 p. (Materials Science Forum; vol. 858)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Cleaning
Chlorine
Etching
Gases
Crystals
Temperature
Silicon
Gases
Hydrogen

Material evaluation and development support project for high current SiC power module

Iguchi, T., Takahashi, A. & Habuka, H. 2016 Jul 25 Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., Vol. 2016-July, p. 131-134 4 p. 7520795

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Semiconductor devices
Carbon dioxide
History

Non-heat assistance chemical vapor deposition of amorphous silicon carbide using monomethylsilane gas under argon plasma

Shioda, K., Tanaka, M., Hirooka, A. & Habuka, H. 2016 Jan 15 In : Surface and Coatings Technology. 285, p. 255-261 7 p.

Research output: Contribution to journalArticle

Silicon carbide
Argon
Plasmas
Substrates
Gases

Repetition of in situ cleaning using chlorine trifluoride gas for silicon carbide epitaxial reactor

Mizuno, K., Shioda, K., Habuka, H., Ishida, Y. & Ohno, T. 2016 In : ECS Journal of Solid State Science and Technology. 5, 2, p. P12-P15

Research output: Contribution to journalArticle

Silicon carbide
Cleaning
Chlorine
Gases
Atmospheric pressure
2015

Amorphous silicon carbide thin film formation at room temperature

Habuka, H. 2015 Jan 1 Advances in Materials Science Research. Nova Science Publishers, Inc., Vol. 18, p. 107-152 46 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

Silicon
Silicon carbide
Temperature
Thin films
Hydrogen
1 Citations

By-product formation in a trichlorosilane-hydrogen system for silicon film deposition

Habuka, H., Sakurai, A. & Saito, A. 2015 In : ECS Journal of Solid State Science and Technology. 4, 2, p. P16-P19

Research output: Contribution to journalArticle

Byproducts
Chemical vapor deposition
Silicon
Hydrogen
Crystals

Chlorine trifluoride dry etching for silicon carbide material production process

Habuka, H. H. 2015 Jan 1 Advances in Materials Science Research. Nova Science Publishers, Inc., Vol. 19, p. 43-82 40 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

Silicon carbide
Etching
Gases
Temperature
Chlorine
1 Citations

Chlorine trifluoride gas transport and etching rate distribution in silicon carbide dry etcher

Yajima, D., Nakagomi, K., Habuka, H. & Kato, T. 2015 Materials Science Forum. Trans Tech Publications Ltd, Vol. 821-823, p. 553-556 4 p. (Materials Science Forum; vol. 821-823)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gases
Chlorine
Etching
Silicon carbide
1 Citations

Cleaning process for using chlorine trifluoride gas silicon carbide chemical vapor deposition reactor

Habuka, H., Fukumoto, Y., Mizuno, K., Ishida, Y. & Ohno, T. 2015 Materials Science Forum. Trans Tech Publications Ltd, Vol. 821-823, p. 125-128 4 p. (Materials Science Forum; vol. 821-823)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Cleaning
Chlorine
Chemical vapor deposition
Carbon
1 Citations
Protective atmospheres
Molecules
Physisorption
Molecular interactions
Silicon oxides
3 Citations

In situ cleaning process of silicon carbide epitaxial reactor

Mizuno, K., Habuka, H., Ishida, Y. & Ohno, T. 2015 In : ECS Journal of Solid State Science and Technology. 4, 5, p. P137-P140

Research output: Contribution to journalArticle

Silicon carbide
Etching
Cleaning
Polysilicon
Chlorine
Silicon oxides
Organic compounds
Quartz crystal microbalances
Glass
Molecules
1 Citations

In-situ observation of chemical vapor deposition using SiHCl<inf>3</inf> and BCl<inf>3</inf> gases

Saito, A., Miyazaki, K., Matsui, M. & Habuka, H. 2015 Jul 1 In : Physica Status Solidi (C) Current Topics in Solid State Physics. 12, 7, p. 953-957 5 p.

Research output: Contribution to journalArticle

Boron
Silicon
Gases
Crystals
Temperature
1 Citations

Numerical evaluation of silicon epitaxial growth on a 450 mm diameter substrate

Matsui, M. & Habuka, H. 2015 Jul 1 In : Physica Status Solidi (A) Applications and Materials Science. 212, 7, p. 1539-1543 5 p.

Research output: Contribution to journalArticle

Substrates
Silicon
Epitaxial growth
Flow of gases
Gases

Surface and gas phase reactions induced in a trichlorosilane-SiH<inf>x</inf> system for silicon film deposition

Sakurai, A., Saito, A. & Habuka, H. 2015 Jun 25 In : Surface and Coatings Technology. 272, p. 273-277 5 p.

Research output: Contribution to journalArticle

Silicon
Hydrogen
Gases
Spectrum analyzers
Quartz crystal microbalances
2014
5 Citations

Cleaning process applicable to silicon carbide chemical vapor deposition reactor

Habuka, H., Fukumoto, Y., Mizuno, K., Ishida, Y. & Ohnob, T. 2014 Feb 17 In : ECS Journal of Solid State Science and Technology. 3, 1

Research output: Contribution to journalArticle

Silicon carbide
Cleaning
Chlorine
Chemical vapor deposition
Coatings
1 Citations

Development of silicon carbide dry etcher using chlorine trifluoride gas

Yajima, D., Habuka, H. & Kato, T. 2014 Jan 1 Materials Science Forum. Trans Tech Publications Ltd, Vol. 778-780, p. 738-741 4 p. (Materials Science Forum; vol. 778-780)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gases
Chlorine
Etching
Substrates
Dry etching
1 Citations
Silicon carbide
Silicon
Gases
Temperature
Aluminum
1 Citations

Off-orientation influence on C-face (0001) 4H-SiC surface morphology produced by etching using chlorine trifluoride gas

Fukumoto, Y., Habuka, H. & Kato, T. 2014 Jan 1 Materials Science Forum. Trans Tech Publications Ltd, Vol. 778-780, p. 734-737 4 p. (Materials Science Forum; vol. 778-780)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chlorine
Etching
Gases
Temperature
Surface morphology

Precipitates caused in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere

Nakazawa, H., Ogino, M., Teranishi, H., Takahashi, Y. & Habuka, H. 2014 Materials Research Society Symposium Proceedings. Materials Research Society, Vol. 1591

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Precipitates
Annealing
Protective atmospheres
Silicon
Crystals

Precipitates caused in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere

Nakazawa, H., Ogino, M., Teranishi, H., Takahashi, Y. & Habuka, H. 2014 Jan 1 In : Twentieth-Century Music. 1591, 1

Research output: Contribution to journalArticle

Annealing
Temperature
Atmosphere
Nitrogen
Ingots

Precipitates formed in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere

Nakazawa, H., Ogino, M., Teranishi, H., Takahashi, Y. & Habuka, H. 2014 Jan 1 In : Japanese Journal of Applied Physics. 53, 5 SPEC. ISSUE 1, 05FJ05

Research output: Contribution to journalArticle

Precipitates
Nitrogen
Annealing
Silicon wafers
X rays
2013

Amorphous silicon carbide film formation at room temperature by monomethylsilane gas

Habuka, H., Tsuji, M. & Ando, Y. 2013 Feb 25 Materials Science Forum. Vol. 740-742, p. 235-238 4 p. (Materials Science Forum; vol. 740-742)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Silicon
Gases
Temperature
Amorphous silicon
6 Citations
Silicon carbide
Silicon
Metals
Gases
Temperature

Crystalline Defects in Silicon Wafer Caused by Prolonged High-Temperature Annealing in Nitrogen Atmosphere

Nakazawa, H., Ogino, M., Teranishi, H., Takahashi, Y. & Habuka, H. 2013 Jul 8 Advanced Materials Research. Vol. 699, p. 445-449 5 p. (Advanced Materials Research; vol. 699)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Precipitates
Nitrogen
Silicon wafers
Annealing
Protective atmospheres
3 Citations

Langasite crystal microbalance frequency behavior over wide gas phase conditions for chemical vapor deposition

Habuka, H. & Matsui, M. 2013 Sep 15 In : Surface and Coatings Technology. 230, p. 312-315 4 p.

Research output: Contribution to journalArticle

Gases
Crystals
Gas mixtures
Chemical vapor deposition
Nitrogen
1 Citations

Numerical calculation model of single wafer wet etcher using swinging nozzle

Habuka, H., Ohashi, S., Mizuno, K. & Kinoshita, T. 2013 ECS Transactions. 6 ed. Electrochemical Society Inc., Vol. 58, p. 39-46 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nozzles
Etching
Wet etching
Silicon wafers
Computational fluid dynamics
1 Citations
Etching
Chlorine
Gases
Temperature
Surface morphology
2 Citations

Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod

Nakazawa, H., Ogino, M., Teranishi, H., Takahashi, Y. & Habuka, H. 2013 Jun 1 In : Materials Science in Semiconductor Processing. 16, 3, p. 923-927 5 p.

Research output: Contribution to journalArticle

Precipitates
Annealing
Silicon
Protective atmospheres
Crystals
1 Citations

Silicon chemical vapor deposition process using a half-inch silicon wafer for Minimal Manufacturing system

Li, N., Habuka, H., Ikeda, S. I. & Hara, S. 2013 Physics Procedia. Elsevier, Vol. 46, p. 230-238 9 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chlorine
Chemical vapor deposition
Cleaning
Heating
Silicon
1 Citations
Silica
Hydrogen
Chemical reactions
Etching
Surface reactions