Research Output 1982 2016

  • 907 Citations
  • 17 h-Index
  • 90 Article
  • 36 Conference contribution
  • 5 Chapter
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Article
2016

Formation and removal of carbon film on silicon carbide surface using chlorine trifluoride gas

Hirooka, A., Habuka, H., Takahashi, Y. & Kato, T. 2016 In : ECS Journal of Solid State Science and Technology. 5, 7, p. P441-P445

Research output: Contribution to journalArticle

Carbon films
Silicon carbide
Etching
Chlorine
Gases
Crystals
Temperature
Silicon
Gases
Hydrogen

Non-heat assistance chemical vapor deposition of amorphous silicon carbide using monomethylsilane gas under argon plasma

Shioda, K., Tanaka, M., Hirooka, A. & Habuka, H. 2016 Jan 15 In : Surface and Coatings Technology. 285, p. 255-261 7 p.

Research output: Contribution to journalArticle

Silicon carbide
Argon
Plasmas
Substrates
Gases

Repetition of in situ cleaning using chlorine trifluoride gas for silicon carbide epitaxial reactor

Mizuno, K., Shioda, K., Habuka, H., Ishida, Y. & Ohno, T. 2016 In : ECS Journal of Solid State Science and Technology. 5, 2, p. P12-P15

Research output: Contribution to journalArticle

Silicon carbide
Cleaning
Chlorine
Gases
Atmospheric pressure
2015
1 Citations

By-product formation in a trichlorosilane-hydrogen system for silicon film deposition

Habuka, H., Sakurai, A. & Saito, A. 2015 In : ECS Journal of Solid State Science and Technology. 4, 2, p. P16-P19

Research output: Contribution to journalArticle

Byproducts
Chemical vapor deposition
Silicon
Hydrogen
Crystals
1 Citations
Protective atmospheres
Molecules
Physisorption
Molecular interactions
Silicon oxides
3 Citations

In situ cleaning process of silicon carbide epitaxial reactor

Mizuno, K., Habuka, H., Ishida, Y. & Ohno, T. 2015 In : ECS Journal of Solid State Science and Technology. 4, 5, p. P137-P140

Research output: Contribution to journalArticle

Silicon carbide
Etching
Cleaning
Polysilicon
Chlorine
Silicon oxides
Organic compounds
Quartz crystal microbalances
Glass
Molecules
1 Citations

In-situ observation of chemical vapor deposition using SiHCl<inf>3</inf> and BCl<inf>3</inf> gases

Saito, A., Miyazaki, K., Matsui, M. & Habuka, H. 2015 Jul 1 In : Physica Status Solidi (C) Current Topics in Solid State Physics. 12, 7, p. 953-957 5 p.

Research output: Contribution to journalArticle

Boron
Silicon
Gases
Crystals
Temperature
1 Citations

Numerical evaluation of silicon epitaxial growth on a 450 mm diameter substrate

Matsui, M. & Habuka, H. 2015 Jul 1 In : Physica Status Solidi (A) Applications and Materials Science. 212, 7, p. 1539-1543 5 p.

Research output: Contribution to journalArticle

Substrates
Silicon
Epitaxial growth
Flow of gases
Gases

Surface and gas phase reactions induced in a trichlorosilane-SiH<inf>x</inf> system for silicon film deposition

Sakurai, A., Saito, A. & Habuka, H. 2015 Jun 25 In : Surface and Coatings Technology. 272, p. 273-277 5 p.

Research output: Contribution to journalArticle

Silicon
Hydrogen
Gases
Spectrum analyzers
Quartz crystal microbalances
2014
5 Citations

Cleaning process applicable to silicon carbide chemical vapor deposition reactor

Habuka, H., Fukumoto, Y., Mizuno, K., Ishida, Y. & Ohnob, T. 2014 Feb 17 In : ECS Journal of Solid State Science and Technology. 3, 1

Research output: Contribution to journalArticle

Silicon carbide
Cleaning
Chlorine
Chemical vapor deposition
Coatings
1 Citations
Silicon carbide
Silicon
Gases
Temperature
Aluminum

Precipitates caused in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere

Nakazawa, H., Ogino, M., Teranishi, H., Takahashi, Y. & Habuka, H. 2014 Jan 1 In : Twentieth-Century Music. 1591, 1

Research output: Contribution to journalArticle

Annealing
Temperature
Atmosphere
Nitrogen
Ingots

Precipitates formed in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere

Nakazawa, H., Ogino, M., Teranishi, H., Takahashi, Y. & Habuka, H. 2014 Jan 1 In : Japanese Journal of Applied Physics. 53, 5 SPEC. ISSUE 1, 05FJ05

Research output: Contribution to journalArticle

Precipitates
Nitrogen
Annealing
Silicon wafers
X rays
2013
6 Citations
Silicon carbide
Silicon
Metals
Gases
Temperature
3 Citations

Langasite crystal microbalance frequency behavior over wide gas phase conditions for chemical vapor deposition

Habuka, H. & Matsui, M. 2013 Sep 15 In : Surface and Coatings Technology. 230, p. 312-315 4 p.

Research output: Contribution to journalArticle

Gases
Crystals
Gas mixtures
Chemical vapor deposition
Nitrogen
1 Citations
Etching
Chlorine
Gases
Temperature
Surface morphology
2 Citations

Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod

Nakazawa, H., Ogino, M., Teranishi, H., Takahashi, Y. & Habuka, H. 2013 Jun 1 In : Materials Science in Semiconductor Processing. 16, 3, p. 923-927 5 p.

Research output: Contribution to journalArticle

Precipitates
Annealing
Silicon
Protective atmospheres
Crystals
1 Citations
Silica
Hydrogen
Chemical reactions
Etching
Surface reactions
2012
5 Citations
Crystals
Deposition rates
Silicon carbide
Monitoring
Amorphous silicon
2 Citations

Numerical calculation model of a single wafer wet etcher using a swinging nozzle

Habuka, H., Ohashi, S. & Kinoshita, T. 2012 Oct 1 In : Materials Science in Semiconductor Processing. 15, 5, p. 543-548 6 p.

Research output: Contribution to journalArticle

Nozzles
Wet etching
Etching
Silicon wafers
Computational fluid dynamics

Silicon epitaxial growth rate and transport phenomena in a vertical stacked-type multi-wafer reactor

Habuka, H. & Tsuji, M. 2012 Feb 1 In : Japanese Journal of Applied Physics. 51, 2 PART 1, 026701

Research output: Contribution to journalArticle

Substrates
Gases
Epitaxial growth
Silicon
Flow of gases
2011
Hafnium oxides
Temperature
Atomic layer deposition
Oxide films
Cleaning
2 Citations
Crystals
Silicon carbide
Gases
Chemical vapor deposition
Temperature
5 Citations

Low temperature SiC film deposition using trichlorosilane gas and monomethylsilane gas

Habuka, H. & Ando, Y. 2011 Sep 1 In : Journal of Nanoscience and Nanotechnology. 11, 9, p. 8374-8377 4 p.

Research output: Contribution to journalArticle

Gases
Temperature
Silicon carbide
Thin films
Silicon
11 Citations
Silicon carbide
Temperature
Hydrogen
Annealing
Silicon
6 Citations

Room temperature process for chemical vapor deposition of amorphous silicon carbide thin film using monomethylsilane gas

Habuka, H., Ando, Y. & Tsuji, M. 2011 Dec 15 In : Surface and Coatings Technology. 206, 6, p. 1503-1506 4 p.

Research output: Contribution to journalArticle

Silicon carbide
Silicon
Temperature
Thin films
Gases
10 Citations

Silicon epitaxial growth process using trichlorosilane gas in a single-wafer high-speed substrate rotation reactor

Habuka, H., Suzuki, J., Takai, Y., Hirata, H. & Mitani, S. I. 2011 Jul 15 In : Journal of Crystal Growth. 327, 1, p. 1-5 5 p.

Research output: Contribution to journalArticle

Silicon
Substrates
Gases
Epitaxial growth
Hydrogen
Hydrogen
Silicon
Gases
Annealing
Substrates
7 Citations

Water motion over a wafer surface rotating in a single-water wet cleaner

Habuka, H., Ohashi, S., Tsuchimochi, T. A. & Kinoshita, T. 2011 Apr 4 In : Journal of the Electrochemical Society. 158, 5

Research output: Contribution to journalArticle

Water
Video cameras
Flow visualization
Ink
2010
7 Citations

Dominant forces for driving bubbles in a wet cleaning bath using megasonic wave

Habuka, H., Fukumoto, R., Okada, Y. & Kato, M. 2010 Nov 1 In : Journal of the Electrochemical Society. 157, 6

Research output: Contribution to journalArticle

Buoyancy
Cleaning
Wave power
Video cameras
Bubbles (in fluids)
7 Citations
Physisorption
Organic compounds
Rate constants
Silicon
Molecular interactions
20 Citations

Silicon carbide film deposition at low temperatures using monomethylsilane gas

Habuka, H., Ohmori, H. & Ando, Y. 2010 Jan 25 In : Surface and Coatings Technology. 204, 9-10, p. 1432-1437 6 p.

Research output: Contribution to journalArticle

Gases
Hydrogen
Temperature
Silicon carbide
Silicon
2009
12 Citations

4H silicon carbide etching using chlorine trifluoride gas

Habuka, H., Katsumi, Y., Miura, Y., Tanaka, K., Fukai, Y., Fukae, T., Gao, Y., Kato, T., Okumura, H. & Arai, K. 2009 Apr 10 In : Materials Science Forum. 600-603, p. 655-658 4 p.

Research output: Contribution to journalArticle

Etching
Silicon carbide
Gases
Temperature
Chlorine
3 Citations

Etching rate of silicon dioxide using chlorine trifluoride gas

Miura, Y., Kasahara, Y., Habuka, H., Takechi, N. & Fukae, K. 2009 Feb 1 In : Japanese Journal of Applied Physics. 48, 2, 026504

Research output: Contribution to journalArticle

Etching
Gases
Temperature
Substrates
Fused silica
1 Citations

Hafnium oxide film etching using hydrogen chloride gas

Habuka, H., Yamaji, M., Kobori, Y., Horii, S. & Kunii, Y. 2009 Dec 1 In : Japanese Journal of Applied Physics. 48, 12, 125503

Research output: Contribution to journalArticle

Hafnium oxides
Oxide films
Etching
Hydrogen
Gases
18 Citations

Temperature-dependent behavior of 4H-silicon carbide surface morphology etched using chlorine trifluoride gas

Habuka, H., Tanaka, K., Katsumi, Y., Takechi, N., Fukae, K. & Kato, T. 2009 Nov 10 In : Journal of the Electrochemical Society. 156, 12

Research output: Contribution to journalArticle

Temperature
Silicon carbide
Chlorine
Surface morphology
Crystalline materials
2008
3 Citations

Decarbonation and pore structural change of Ca-solid reactant for CaO/CO2 chemical heat pump

Aihara, M., Yoshii, T., Shimazaki, Y., Takeuchi, T. & Habuka, H. 2008 Jul 7 In : Journal of Chemical Engineering of Japan. 41, 6, p. 513-518 6 p.

Research output: Contribution to journalArticle

Pore structure
Pumps
Carbonation
Thermal energy
Numerical analysis
2 Citations
Oxides
Thermal gradients
Silicon
Temperature
Electric lamps
2007
2 Citations

Carbonation/decarbonation of Ca-solid reactant derived from natural limestone for thermal-energy storage and temperature upgrade

Aihara, M., Tanaka, K., Watanabe, M., Takeuchi, T. & Habuka, H. 2007 Dec 27 In : Journal of Chemical Engineering of Japan. 40, 13, p. 1270-1274 5 p.

Research output: Contribution to journalArticle

Carbonation
Limestone
Durability
Temperature
Thermal energy
14 Citations

Heat transport analysis for flash lamp annealing

Habuka, H., Hara, A., Karasawa, T. & Yoshioka, M. 2007 Mar 8 In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46, 3 A, p. 937-942 6 p.

Research output: Contribution to journalArticle

Silicon
Temperature
Electric lamps
Light absorption
Annealing
6 Citations

Physisorption and desorption of diethyl phthalate and isopropanol on a silicon surface

Habuka, H. & Yamaya, D. 2007 Nov 2 In : Journal of the Electrochemical Society. 154, 12

Research output: Contribution to journalArticle

Silicon
Molecules
Physisorption
Organic compounds
Desorption
13 Citations

Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases

Habuka, H., Watanabe, M., Nishida, M. & Sekiguchi, T. 2007 Sep 25 In : Surface and Coatings Technology. 201, 22-23 SPEC. ISS., p. 8961-8965 5 p.

Research output: Contribution to journalArticle

Hydrogen
Polysilicon
Silicon carbide
Flow of gases
Flow rate
14 Citations

Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases

Habuka, H., Watanabe, M., Miura, Y., Nishida, M. & Sekiguchi, T. 2007 Mar 15 In : Journal of Crystal Growth. 300, 2, p. 374-381 8 p.

Research output: Contribution to journalArticle

Hydrogen
Gases
Silicon carbide
Silicon
Polysilicon

Water motion in a water curtain head for cleaning a large glass plate

Habuka, H., Yoshii, H., Kobayashi, S., Hattori, N., Ikuma, S., Kato, M. & Takeuchi, T. 2007 Feb 8 In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46, 2, p. 838-842 5 p.

Research output: Contribution to journalArticle

Water
Air
Glass
Fluid dynamics
Flow patterns
2006
15 Citations

Etch rate and surface morphology of polycrystalline β-silicon carbide using chlorine trifluoride gas

Habuka, H., Oda, S., Fukai, Y., Fukae, K., Takeuchi, T. & Aihara, M. 2006 Aug 30 In : Thin Solid Films. 514, 1-2, p. 193-197 5 p.

Research output: Contribution to journalArticle

Chlorine
Gases
Temperature
Substrates
Silicon carbide
2005
3 Citations

Air flow in square quartz plate spin cleaner

Habuka, H., Pan, H., Fujita, K., Kato, M., Takeuchi, T. & Aihara, M. 2005 Nov 9 In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 11, p. 8182-8185 4 p.

Research output: Contribution to journalArticle

Air
Quartz
Water
Fog
Masks
35 Citations

Dominant rate process of silicon surface etching by hydrogen chloride gas

Habuka, H., Suzuki, T., Yamamoto, S., Nakamura, A., Takeuchi, T. & Aihara, M. 2005 Oct 1 In : Thin Solid Films. 489, 1-2, p. 104-110 7 p.

Research output: Contribution to journalArticle

Silicon
Hydrogen
Gases
Etching
Atmospheric pressure
8 Citations

Gas velocity influence on silicon surface organic contamination evaluated using quartz crystal microbalance

Habuka, H., Tawada, M., Takeuchi, T. & Aihara, M. 2005 Dec 2 In : Journal of the Electrochemical Society. 152, 11

Research output: Contribution to journalArticle

Gases
Quartz crystal microbalances
Silicon
Desorption
Contamination