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Research Output 1982 2016

  • 907 Citations
  • 17 h-Index
  • 90 Article
  • 36 Conference contribution
  • 5 Chapter
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Conference contribution
2016

Etching rate behavior of 4H-silicon carbide epitaxial film using chlorine trifluoride gas

Hirooka, A., Habuka, H. & Kato, T. 2016 Materials Science Forum. Trans Tech Publications Ltd, Vol. 858, p. 715-718 4 p. (Materials Science Forum; vol. 858)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Epitaxial films
Chlorine
Etching
Substrates

In situ cleaning process of silicon carbide epitaxial reactor for removing film-type deposition formed on susceptor

Mizuno, K., Habuka, H., Ishida, Y. & Ohno, T. 2016 Materials Science Forum. Trans Tech Publications Ltd, Vol. 858, p. 237-240 4 p. (Materials Science Forum; vol. 858)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Cleaning
Chlorine
Etching
Gases

Material evaluation and development support project for high current SiC power module

Iguchi, T., Takahashi, A. & Habuka, H. 2016 Jul 25 Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., Vol. 2016-July, p. 131-134 4 p. 7520795

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Semiconductor devices
Carbon dioxide
History
2015
1 Citations

Chlorine trifluoride gas transport and etching rate distribution in silicon carbide dry etcher

Yajima, D., Nakagomi, K., Habuka, H. & Kato, T. 2015 Materials Science Forum. Trans Tech Publications Ltd, Vol. 821-823, p. 553-556 4 p. (Materials Science Forum; vol. 821-823)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gases
Chlorine
Etching
Silicon carbide
1 Citations

Cleaning process for using chlorine trifluoride gas silicon carbide chemical vapor deposition reactor

Habuka, H., Fukumoto, Y., Mizuno, K., Ishida, Y. & Ohno, T. 2015 Materials Science Forum. Trans Tech Publications Ltd, Vol. 821-823, p. 125-128 4 p. (Materials Science Forum; vol. 821-823)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Cleaning
Chlorine
Chemical vapor deposition
Carbon
2014
1 Citations

Development of silicon carbide dry etcher using chlorine trifluoride gas

Yajima, D., Habuka, H. & Kato, T. 2014 Jan 1 Materials Science Forum. Trans Tech Publications Ltd, Vol. 778-780, p. 738-741 4 p. (Materials Science Forum; vol. 778-780)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gases
Chlorine
Etching
Substrates
Dry etching
1 Citations

Off-orientation influence on C-face (0001) 4H-SiC surface morphology produced by etching using chlorine trifluoride gas

Fukumoto, Y., Habuka, H. & Kato, T. 2014 Jan 1 Materials Science Forum. Trans Tech Publications Ltd, Vol. 778-780, p. 734-737 4 p. (Materials Science Forum; vol. 778-780)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chlorine
Etching
Gases
Temperature
Surface morphology

Precipitates caused in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere

Nakazawa, H., Ogino, M., Teranishi, H., Takahashi, Y. & Habuka, H. 2014 Materials Research Society Symposium Proceedings. Materials Research Society, Vol. 1591

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Precipitates
Annealing
Protective atmospheres
Silicon
Crystals
2013

Amorphous silicon carbide film formation at room temperature by monomethylsilane gas

Habuka, H., Tsuji, M. & Ando, Y. 2013 Feb 25 Materials Science Forum. Vol. 740-742, p. 235-238 4 p. (Materials Science Forum; vol. 740-742)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Silicon
Gases
Temperature
Amorphous silicon

Crystalline Defects in Silicon Wafer Caused by Prolonged High-Temperature Annealing in Nitrogen Atmosphere

Nakazawa, H., Ogino, M., Teranishi, H., Takahashi, Y. & Habuka, H. 2013 Jul 8 Advanced Materials Research. Vol. 699, p. 445-449 5 p. (Advanced Materials Research; vol. 699)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Precipitates
Nitrogen
Silicon wafers
Annealing
Protective atmospheres
1 Citations

Numerical calculation model of single wafer wet etcher using swinging nozzle

Habuka, H., Ohashi, S., Mizuno, K. & Kinoshita, T. 2013 ECS Transactions. 6 ed. Electrochemical Society Inc., Vol. 58, p. 39-46 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nozzles
Etching
Wet etching
Silicon wafers
Computational fluid dynamics
1 Citations

Silicon chemical vapor deposition process using a half-inch silicon wafer for Minimal Manufacturing system

Li, N., Habuka, H., Ikeda, S. I. & Hara, S. 2013 Physics Procedia. Elsevier, Vol. 46, p. 230-238 9 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chlorine
Chemical vapor deposition
Cleaning
Heating
Silicon
2012

Concentration of three organic compounds influencing each other on silicon surface

Habuka, H., Naito, T. & Kawahara, N. 2012 Apr 30 Solid State Phenomena. Vol. 187, p. 303-306 4 p. (Solid State Phenomena; vol. 187)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Organic compounds
Silicon
Quartz crystal microbalances
Contamination
6 Citations

Density and behavior of etch pits on C-face 4H-SiC surface produced by ClF 3 Gas

Habuka, H., Furukawa, K., Kanai, T. & Kato, T. 2012 May 28 Materials Science Forum. Vol. 717-720, p. 379-382 4 p. (Materials Science Forum; vol. 717-720)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Substrates
Gases
Temperature
Chlorine
Crystals
7 Citations

Density of etch pits on C-face 4H-SiC surface produced by ClF3 gas

Habuka, H., Furukawa, K., Kanai, T. & Kato, T. 2012 Dec 1 Materials Science Forum. Vol. 725, p. 49-52 4 p. (Materials Science Forum; vol. 725)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gases
Chlorine
Etching
Crystals
Substrates

Room temperature process for chemical vapor deposition of amorphous silicon carbide thin film using monomethylsilane gas

Habuka, H., Ando, Y. & Tsuji, M. 2012 Dec 1 Materials Research Society Symposium Proceedings. Vol. 1433, p. 77-82 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Silicon
Gases
Temperature
Amorphous silicon
2011
1 Citations

Etch pits on 4H-SiC surface produced by CIF3 gas

Habuka, H., Furukawa, K., Tanaka, K., Katsumi, Y., Iizuka, S., Fukae, K. & Kato, T. 2011 Apr 28 Materials Science Forum. Vol. 679-680, p. 286-289 4 p. (Materials Science Forum; vol. 679-680)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gases
Edge dislocations
Screw dislocations
Atmospheric pressure
Etching
1 Citations

Water motion over a wafer surface rotating in a single-wafer wet cleaner

Habuka, H., Ohashi, S., Tsuchimochi, T. A. & Kinoshita, T. 2011 Dec 1 ECS Transactions. 5 ed. Vol. 41, p. 279-286 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Water
Flow visualization
Ink
Computational fluid dynamics
2010
10 Citations

4H-SiC surface morphology etched using ClF3 gas

Habuka, H., Tanaka, K., Katsumi, Y., Takechi, N., Fukae, K. & Kato, T. 2010 Jan 1 Materials Science Forum. Trans Tech Publications Ltd, Vol. 645-648, p. 787-790 4 p. (Materials Science Forum; vol. 645-648)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Substrates
Temperature
Silicon carbide
Etching
Gases

Etch pits of 4H-silicon carbide surface formed using chlorine trifluoride gas

Habuka, H., Furukawa, K., Tanaka, K., Katsumi, Y., Takechi, N., Fukae, K. & Kato, T. 2010 Dec 29 ECS Transactions. 4 ed. Vol. 28, p. 81-88 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Temperature
Silicon carbide
Chlorine
Crystalline materials
Substrates
2009

Atmospheric pressure SiC film deposition at low temperatures using SiH 3CH3 and HCL gases

Habuka, H. & Ohmori, H. 2009 Dec 1 ECS Transactions. 8 PART 1 ed. Vol. 25, p. 191-198 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gases
Silicon carbide
Hydrogen
Temperature
Atmospheric pressure
2 Citations

Hafnium oxide etching using hydrogen chloride gas

Habuka, H., Kobori, Y., Yamaji, M., Horii, S. & Kunii, Y. 2009 Dec 1 ECS Transactions. 1 ed. Vol. 19, p. 289-299 11 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hafnium oxides
Etching
Hafnium
Chemical reactions
Powders
3 Citations

Water and bubble motions under megasonic wave in a silicon wafer wet cleaning bath

Habuka, H., Okada, Y., Fukumoto, R., Yoshii, H. & Kato, M. 2009 Dec 1 ECS Transactions. 5 ed. Vol. 25, p. 265-272 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Water
Silicon wafers
Cleaning
Ink
2008
7 Citations

Etching rate behavior of 4H-silicon carbide using chlorine trifluoride gas

Miura, Y., Katsumi, Y., Tanaka, K., Oda, S., Habuka, H., Gao, Y., Fukai, Y., Fukae, K., Kato, T., Okumura, H. & Arai, K. 2008 Nov 17 ECS Transactions. 3 ed. Vol. 13, p. 39-52 14 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Chlorine
Etching
Substrates
Gases
2007

In-situ measurement method and rate theory for clarifying multi-component organic compounds adsorption and desorption on silicon surface

Habuka, H. & Yamaya, D. 2007 ECS Transactions. 3 ed. Vol. 11, p. 363-374 12 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Organic compounds
Silicon
Gases
Quartz crystal microbalances
Desorption

Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases

Habuka, H., Watanabe, M., Nisbida, M. & Sekiguchi, T. 2007 Dec 1 ECS Transactions. 2 ed. Vol. 6, p. 69-81 13 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hydrogen
Gases
Polysilicon
Silicon carbide
Silicon
1 Citations

Small-batch reactor development for silicon epitaxial film growth based on theory of transport phenomena

Habuka, H., Sakakibara, H., Kawaoka, M., Arimura, K., Scudder, L. & Okabe, A. 2007 ECS Transactions. 7 ed. Vol. 2, p. 21-32 12 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epitaxial films
Silicon
Gases
Surface reactions
Batch reactors
2006
1 Citations

Influence of gas velocity and humidity on diethyl phthalate adsorption and desorption on silicon surface

Habuka, H., Tawada, M., Suzuki, K., Takeuchi, T. & Aihara, M. 2006 Jul 3 ECS Transactions. 2 ed. Vol. 2, p. 523-536 14 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gases
Desorption
Adsorption
Quartz crystal microbalances
Nitrogen

Thermodynamic investigation of hydrogen production by methane steam reforming using integrated hydrogen-permselective membrane reactor with CO 2 absorption

Aihara, M., Habuka, H. & Takeuchi, T. 2006 Dec 1 16th World Hydrogen Energy Conference 2006, WHEC 2006. Vol. 2, p. 1506-1514 9 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Exergy
Hydrogen
Hydrogen production
Permselective membranes
Steam reforming
2005

Air flow in a square quartz plate spin cleaner

Habuka, H., Pan, H., Fujita, K., Kato, M., Takeuchi, T. & Aihara, M. 2005 ECS Transactions. Ruzyllo, J., Hattori, T. & Novak, R. E. (eds.). 3 ed. Vol. 1, p. 187-193 7 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Air
Quartz
Water
Fog
Masks

Comparison of methane steam reforming with separation process by exergy analysis

Aihara, M., Takeuchi, T. & Habuka, H. 2005 Dec 1 7th World Congress of Chemical Engineering, GLASGOW2005, incorporating the 5th European Congress of Chemical Engineering.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Exergy
Steam reforming
Permselective membranes
Chemical engineering
Hydrogen production

Measurement of time-dependent organic contamination on silicon surface

Habuka, H. 2005 Dec 1 Proceedings - Electrochemical Society. Kolbesen, B. O., Claeys, C., Farby, L. & Tardif, F. (eds.). Vol. PV 2005-10, p. 61-71 11 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Contamination
Silicon
Quartz crystal microbalances
Water
Clean rooms

Nano-porous structural change of calcium carbonate and calcium oxide as solid reactant for thermal-energy storage and temperature upgrade

Aihara, M., Yoshii, T., Takeuchi, T. & Habuka, H. 2005 Dec 1 7th World Congress of Chemical Engineering, GLASGOW2005, incorporating the 5th European Congress of Chemical Engineering.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Carbonation
Pore structure
Thermal energy
Temperature
Calcium carbonate
2004

CFD-simulation of membrane reactor for methane steam reforming

Takeuchi, T., Aihara, M. & Habuka, H. 2004 Dec 1 AIChE Annual Meeting, Conference Proceedings. p. 10153-10158 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Membranes
Computational fluid dynamics
Computer simulation
Steam reforming
Packed beds

CFD-simulation of membrane reactor for methane steam reforming

Takeuchi, T., Aihara, M. & Habuka, H. 2004 Dec 1 AIChE Annual Meeting, Conference Proceedings.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Membranes
Computational fluid dynamics
Steam reforming
Computer simulation
Momentum transfer
1982

DIELECTRIC BEHAVIOR OF COPOLYMERS OF VINYLIDENE FLUORIDE AND TRIFLUOROETHYLENE.

Koizumi, N., Habuka, H. & Haikawa, N. 1982 Dec 1 Unknown Host Publication Title. Oxford, Engl: IUPAC

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Copolymers