Personal profile

e-rad ID

40323927

Researchmap ID

1000301094

Research Interests

(no English)

URL

http://er-web.jmk.ynu.ac.jp/html/HABUKA_Hitoshi/en.html

External positions

Keywords

  • TP Chemical technology
  • Semiconductor production

Fingerprint Fingerprint is based on mining the text of the person's scientific documents to create an index of weighted terms, which defines the key subjects of each individual researcher.

  • 2 Similar Profiles
Gases Engineering & Materials Science
Silicon Engineering & Materials Science
Temperature Engineering & Materials Science
Silicon carbide Engineering & Materials Science
Substrates Engineering & Materials Science
Hydrogen Engineering & Materials Science
Chlorine Engineering & Materials Science
Etching Engineering & Materials Science

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Research Output 1982 2016

  • 907 Citations
  • 17 h-Index
  • 90 Article
  • 36 Conference contribution
  • 5 Chapter

Etching rate behavior of 4H-silicon carbide epitaxial film using chlorine trifluoride gas

Hirooka, A., Habuka, H. & Kato, T. 2016 Materials Science Forum. Trans Tech Publications Ltd, Vol. 858, p. 715-718 4 p. (Materials Science Forum; vol. 858)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Epitaxial films
Chlorine
Etching
Substrates

Formation and removal of carbon film on silicon carbide surface using chlorine trifluoride gas

Hirooka, A., Habuka, H., Takahashi, Y. & Kato, T. 2016 In : ECS Journal of Solid State Science and Technology. 5, 7, p. P441-P445

Research output: Contribution to journalArticle

Carbon films
Silicon carbide
Etching
Chlorine
Gases

In situ cleaning process of silicon carbide epitaxial reactor for removing film-type deposition formed on susceptor

Mizuno, K., Habuka, H., Ishida, Y. & Ohno, T. 2016 Materials Science Forum. Trans Tech Publications Ltd, Vol. 858, p. 237-240 4 p. (Materials Science Forum; vol. 858)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Cleaning
Chlorine
Etching
Gases
Crystals
Temperature
Silicon
Gases
Hydrogen

Material evaluation and development support project for high current SiC power module

Iguchi, T., Takahashi, A. & Habuka, H. 2016 Jul 25 Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., Vol. 2016-July, p. 131-134 4 p. 7520795

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Semiconductor devices
Carbon dioxide
History