Research Center for Advanced JISSO Technology, Yokohama

Research Output 1991 2016

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Conference contribution
2016

Etching rate behavior of 4H-silicon carbide epitaxial film using chlorine trifluoride gas

Hirooka, A., Habuka, H. & Kato, T. 2016 Materials Science Forum. Trans Tech Publications Ltd, Vol. 858, p. 715-718 4 p. (Materials Science Forum; vol. 858)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Epitaxial films
Chlorine
Etching
Substrates

In situ cleaning process of silicon carbide epitaxial reactor for removing film-type deposition formed on susceptor

Mizuno, K., Habuka, H., Ishida, Y. & Ohno, T. 2016 Materials Science Forum. Trans Tech Publications Ltd, Vol. 858, p. 237-240 4 p. (Materials Science Forum; vol. 858)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Cleaning
Chlorine
Etching
Gases

Material evaluation and development support project for high current SiC power module

Iguchi, T., Takahashi, A. & Habuka, H. 2016 Jul 25 Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., Vol. 2016-July, p. 131-134 4 p. 7520795

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Semiconductor devices
Carbon dioxide
History